HEBALI , Mourad. Effect of Electronic Properties of Si1-xGex and SiC Semiconductors on the Electrical Behavior of MOS Transistors. Physics of Semiconductor Devices & Renewable Energies Journal, [S. l.], v. 1, n. 1, p. 13, 2024. DOI: 10.59684/psdrej.v1i1.6. Disponível em: http://www.psdrej.net/index.php/rv/article/view/6. Acesso em: 25 may. 2026.